Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices
By K. Smithe, C. English, S. Suryavanshi, Eric Pop. 2016
167 citations recorded by the source corpus.
We demonstrate monolayer (1L) MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated 1L devices over a wide range of carrier densities (up to ∼1013 cm−2) and temperatures (80–500 K). Transfer length measurements decouple the intrinsic material mobility from the contact resistance, at practical carrier densities (>1012 cm−2). We demonstrate the highest current density reported to date (∼270 μA μm−1 or 44 MA cm−2) at 300 K for an 80 nm long device from CVD-grown 1L MoS2. Using simulations, we discuss what improvements of 1L MoS2 are still required to meet technology roadmap requirements for low power and high performance applications. Such results are an important step towards large-area electronics based on 1L semiconductors.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/02c5836ec7dbe4d24ea5bad8bd87f5814fa86e55
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Citations in the corpus
- Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “, vsat > 3 × 106 cm/s), then MoS2 FETs can potentially meet the required ON-currents (while meeting the OFF-current requirements) for both HP and LP applications at scaled ITRS technology nodes below 20 nm (Figure 2c compares the projected ON-currents of monolayer MoS2 FETs against ITRS requirements”