Doping, Contact and Interface Engineering of Two‐Dimensional Layered Transition Metal Dichalcogenides Transistors

By Yuda Zhao, Kang Xu, Feng Pan, Changjian Zhou, F. Zhou, Yang Chai. 2017

237 citations recorded by the source corpus.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/02422ffa4ce6e20e939f4ea24b8e94da2987e2f0

How researchers see this paper

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In Materials Chemistry

1. Sanjay Kumar Banerjee
2. Hema C. P. Movva
3. Amritesh Rai
4. D. Taneja
5. Anupam Roy
6. Sayema Chowdhury

Citations in the corpus

• Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “Next, the ultra-thin nature of the 2D MoS2 makes it incredibly challenging to employ conventional CMOS-compatible doping techniques (ion implantation or high-temperature diffusion) to perform controlled and area-selective doping to control the carrier type (n or p) and carrier concentration (ranging”