Metal-ferroelectric-metal structures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films

By Lucian Pintilie, I. Boerasu, M. Gomes, T. Zhao, Ramamoorthy Ramesh, M. Alexe. 2005

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A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface charge situated at a fixed distance from the interface. The presumable high concentration of structural defects acting as active electric traps is taken into account by introducing a deep acceptorlike level. The model is applied on a set of metal-Pb(Zr,Ti)O3-metal samples with different Zr∕Ti ratios, deposited by different methods, and having different thicknesses, electrode materials, and electrode areas. Values around 1018cm−3 were estimated for the hole concentration from capacitance-voltage measurements. The space-charge density near the electrode, estimated from current-voltage measurements, is in the 1020–1021cm−3 range. The total thickness of the interface layer ranges from 3to35nm, depending on the Zr∕Ti ratio, on the shape of the hysteresis loop, and on the elec...

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/016010a2b860cdb3c9480b2e05416e7298a6b865