Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction

By Hongtao Yuan, Xiaoge Liu, Farzaneh Afshinmanesh, Wei Li, Gang Xu, Jie Sun, Biao Lian, G. Ye, Y. Hikita, Zhi-xun Shen and 5 more. 2014

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The ability to detect light over a broad spectral range is central for practical optoelectronic applications, and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS 2 . However, polarization sensitivity within such a photodetector remains elusive. Here we demonstrate linear-dichroic broadband photodetector with layered black phosphorus transistors, using the strong intrinsic linear dichroism arising from the in-plane optical anisotropy with respect to the atom-buckled direction, which is polarization sensitive over a broad bandwidth from about 400 nm to 3750 nm. Especially, a perpendicular built-in electric field induced by gating in the transistor geometry can spatially separate the photo-generated electrons and holes in the channel, effectively reducing their recombination rate, and thus enhancing the performance for linear dichroism photodetection. This provides practical functionality using anisotropic layered black phosphorus, thereby enabling novel optical and optoelectronic device applications. the average of 32 scans. The reflectance spectra were plotted as (R sample /R Au ) ×100%, where R sample was collected from an area with a sample present and R Au was collected from an adjacent Au pad as a total reflection mirror.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/00df08cf5298e9da3258800cfb8623f91db898a0